Speaker
Description
Kevin Lauer,1,2 Robin Müller,2 Katharina Peh,2 Dirk Schulze,2 Stefan Krischok,2 Stephanie Reiß,1 Andreas Frank1 and Thomas Ortlepp1
1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
2Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany
An acceptor removal phenomenon (ARP) appears in irradiated low-gain avalanche detectors (LGAD) and reduces their functionality for higher irradiation fluences. The underlying defect mechanisms are still not fully understood. To further investigate possible defect mechanisms responsible for the ARP we report on experiments related to defect meta-stabilities for the acceptor thallium in silicon.[1] Low-temperature photoluminescence measurements are done during carrier injection and annealing treatments at moderate temperatures. Irreversible and reversible changes of defect luminescence are found, which correspond to similar findings for the case of the acceptor indium. For the acceptor boron the applied treatments lead to detectable PL signals, as well. However, the changes of defect luminescence in that case are different to the indium and thallium cases. The experimental results are discussed in frame of the idea of acceptor-interstitial silicon (ASi-Sii)-defects.[2]
[1] K. Lauer et al., ‘Investigation of Tl-doped silicon by low temperature photoluminescence during LID treatments’, accepted, Phys. Status Solidi A, 2024.
[2] K. Lauer, K. Peh, D. Schulze, T. Ortlepp, E. Runge, and S. Krischok, ‘The ASi–Sii Defect Model of Light-Induced Degradation (LID) in Silicon: A Discussion and Review’, Phys. Status Solidi A, vol. 219, no. 19, p. 2200099, 2022, doi: 10.1002/pssa.202200099.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (scientific results or project proposal) | Presentation on scientific results |
