1st DRD3 week on Solid State Detectors R&D

TCAD Radiation Model for 4H-SiC

19 Jun 2024, 17:10

20m

500/1-001 - Main Auditorium (CERN)

WG3 - Radiation Damage - Extreme Fluence WG3/WP3 - Extreme fluence and radiation damage characterization

Speaker

Jürgen Burin (Austrian Academy of Sciences (AT))

Description

4H-SiC is considered a promising candidate to increase the radiation hardness of particle detectors. Nevertheless, there is not yet a commonly accepted radiation model for TCAD simulations. On the contrary: the values presented in literature, i.e., the trap levels, types and cross sections, deviate significantly.

This project proposes the development of a model that is able to describe radiation damage of 4H-SiC in TCAD tools. Various device types (e.g. diodes, MOS capacitances and transistors) will be irradiated with multiple particle types (neutron, proton, gamma). Results from I-V, C-V and CCE (charge collection efficiency) measurements will then be used to fit a radiation model.

Presentation materials

Burin_TCAD_Models_Parameters.pdf