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Jun 17 – 21, 2024
CERN
Europe/Zurich timezone

TCAD Radiation Model for 4H-SiC

Jun 19, 2024, 5:10 PM
20m
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium

CERN

400
Show room on map
WG3 - Radiation Damage - Extreme Fluence WG3/WP3 - Extreme fluence and radiation damage characterization

Speaker

Jürgen Burin (Austrian Academy of Sciences (AT))

Description

4H-SiC is considered a promising candidate to increase the radiation hardness of particle detectors. Nevertheless, there is not yet a commonly accepted radiation model for TCAD simulations. On the contrary: the values presented in literature, i.e., the trap levels, types and cross sections, deviate significantly.

This project proposes the development of a model that is able to describe radiation damage of 4H-SiC in TCAD tools. Various device types (e.g. diodes, MOS capacitances and transistors) will be irradiated with multiple particle types (neutron, proton, gamma). Results from I-V, C-V and CCE (charge collection efficiency) measurements will then be used to fit a radiation model.

Type of presentation (in-person/online) online presentation (zoom)
Type of presentation (scientific results or project proposal) project proposal for future work

Primary authors

Jürgen Burin (Austrian Academy of Sciences (AT)) Philipp Gaggl (Austrian Academy of Sciences (AT)) Andreas Gsponer (Austrian Academy of Sciences (AT)) Simon Emanuel Waid (Austrian Academy of Sciences (AT)) Thomas Bergauer (Austrian Academy of Sciences (AT))

Presentation materials