Speaker
Description
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity.
While the current understanding of simulation parameters suffices to simulate unirradiated 4H-SiC devices, TCAD models to accurately predict performance degradation after irradiation due to induced defects, acting as traps and recombination centers, do not exist. Despite increasing efforts to characterize the introduction and nature of such defects in 4H-SiC, published results are often contradictory. Parameter values vary by multiple orders of magnitude, extraction of hole cross sections is scarce, and even the origin and charge state of known lifetime killers are still under discussion.
This talk presents our first steps towards a radiation-induced trap model for 4H-SiC. Initial trap definitions based on literature were optimized to fit I-V, C-V, and CCE measurements performed on neutron-irradiated 4H-SiC PiN samples in the fluence range of $5\cdot 10^{14}$ – $1\cdot 10^{16}$ $n_{eq}/cm^2$. Results, though qualitative, are in reasonable agreement with experimental data and strongly suggest the EH$_{6,7}$ defect be of Donor-type, as well as the relevance of a second Acceptor-type defect (EH$_4$) besides the well-known Z$_{1,2}$ center.
Applying the derived radiation model, predictions on the performance alteration of 4H-SiC-LGADs on the example of a design recently commissioned within the scope of the RD50-SiC-LGAD common project will be shown.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (scientific results or project proposal) | Presentation on scientific results |
