1st DRD3 week on Solid State Detectors R&D

Pixelated Gain Devices on Epitaxial SiC

Not scheduled

20m

500/1-001 - Main Auditorium (CERN)

WG6 - Wide bandgap materials WG6/WP3 - Non-silicon-based detectors

Speaker

Kazuyoshi Carvalho Akiba (Nikhef)

Description

Silicon Carbide (4H) is a promising semiconductor for radiation
tolerant particle tracking. The high bandgap offers the additional advantage of
room temperature operation which in turn requires less material due to
cooling. The main goal of this project is to achieve high fill factor pixelated
devices with a built-in gain junction. The devices will be fabricated at IISB
Fraunhofer based on epitaxial sensing volumes grown on 4H-SiC wafers.
Performance will be evaluated in the Lab with radioactive sources and laser
and at beam facilities such as PartRec (Groningen) and SPS (CERN);