Speaker
Description
Institutes interested to join: CERN, FBK, IFIC, IJClab, LPNHE, JSI, UHH, UZH
The project is open to other interested groups.
Two consecutive productions of TI-LGAD at FBK (Trento, Italy), in the framework of RD50 and AIDAinnova WP6, have proven the potential of this technology for the implementation of 4D tracking. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. Different design combinations related to the trenches have been studied to determine their inter-pixel distance.
In this project, a systematic testing campaign is proposed, to determine the radiation hardness of a new run of devices after Carbon co-implantation, possibly optimizing the implantation parameters with respect to the past productions. Since one of the possible applications of these devices could be the Phase-3 upgrade of ATLAS and CMS outer pixel layers, the radiation hardness requirement is in the range of 1-5x10**15 neq/cm2.
The sensors will be characterized both at test-structure level, by connecting them by wire bonding to pre-amplifiers and by bump-bonding them to prototype timing chips that are being developed at the moment.
