Speaker
Description
4H-SiC is becoming a leading candidate for next-generation semiconductor detectors due to the increased availability in industry. These new sensors show promising properties like its stable performance across a wide temperature range, making cooling of irradiated devices not necessary.
This project aims to study radiation hardness, annealing, traps, and the applicability of the NIEL hypothesis to planar junction- and Schottky 4H-SiC diodes in detail. For this it uses state-of-the-art characterization techniques like IV/CV, UV-TCT, TPA-TCT, TSC, DLTS and other methods to determine trap levels, eventually leading to a TCAD irradiation model.
Irradiations over a wide range of fluences with neutrons, protons up to $10^{17} n_{eq}\; cm^{-2}$, heavy ions, and X-rays up to 1Grad, will be performed.
For all these studies, many samples of identical quality are necessary. These samples will be purchased commercially from the industry or produced by collaborating research institutes.
Eventually, all results will contribute to developing SiC-LGADs and other SiC-based detectors.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | II. Presentation on project proposal |
