Speaker
Description
Two Photon Absorption (TPA) effect is a second order non-linear optical effect in semiconductor material, which refers to the phenomenon that when a femto-second laser is focused inside the device, electrons in valance band could absorb two photons simultaneously and create a point-like activation region around laser focus. Electron-hole pairs generated in the activation region can be used to test the field inside the device. This technique features precisely controllable testing position and high temporal resolution. In this work, we applied TPA testing on a planar diamond sample and a 4H-SiC sample (cooperating with HEPHY), and the performance of the detectors are examined. With Sentaurus TCAD, electric fields in the samples are simulated, the drifting and diffusion of carriers generated by TPA effect and signal response are then modelled with Monte Carlo method using Garfield++, which is compared with the experimental TPA results.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
