Speaker
Description
4H-SiC detectors have potential to operate in high radiation and room-temperature environments due to the broader band gap, elevated atomic displacement threshold energy and high thermal conductivity. In order to verify the irradiation resistance of 4H-SiC LGAD devices, we successfully prepared LGAD devices with a gain factor of 3 and proceeded to irradiate the device with protons at 80 MeV (2 × 10¹¹neq/cm2 ~ 1 × 10¹⁴ neq/cm2). Based on the defects identified in the 4H-SiC LGAD, the current-voltage, capacitance-voltage and gain factor of the devices were characterized and simulated before and after irradiation. In terms of the performance of leakage current and charge collection after radiation, 4H-SiC exhibits good radiation resistance, and the physical explanation can be given by simulation.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
