Speaker
Ioana Pintilie
(National Inst. of Materials Physics (RO))
Description
We will present an overview of the on-going investigations of radiation induced defects in Si and SiC sensors performed within WG3 group.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
Author
Ioana Pintilie
(National Inst. of Materials Physics (RO))
Co-authors
Andrei Nitescu
(National Institute of Material Physics -NIMP)
Dr
Anja Himmerlich
(CERN)
Dr
Cristina Besleaga
(National Institute of Materials Physics)
Eckhart Fretwurst
(Hamburg University (DE))
Dr
Joern Schwandt
(Hamburg University)
Michael Moll
(CERN)
Moritz Wiehe
(CERN)
Niels Sorgenfrei
(CERN / Albert Ludwigs Universitaet Freiburg (DE))
Dr
Valentina Sola
(INFN Torino)
Dr
Yana Gurimskaya
(CERN)
