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Description
Low Gain Avalanche Detectors (LGADs) are promising devices for high-precision timing and tracking applications in high-energy physics experiments. This study investigates the effects of radiation damage on LGAD performance following exposure to 24 GeV energy protons. The samples made by Hamamatsu Photonics K.K. were subjected to varying proton fluences (Φ = 1E12-1E16 p/cm^2), and their gain and charge collection efficiency (CCE) were measured, revealing a degradation with increasing fluence. To further understand these effects, free carrier lifetime was characterized using the microwave-probed photoconductivity (MW-PC) method, which demonstrated a significant decrease in carrier lifetimes as proton fluence increased. Additionally, photoionization spectroscopy was employed to analyze defect energy levels within the band-gap associated with radiation-induced damage. Results indicate a correlation between proton fluence and the number of radiation-induced defect species, providing valuable insights into the mechanisms behind LGAD performance degradation. These findings contribute to the optimization of LGAD design for improved radiation hardness in future applications.
