Speaker
Description
Monolithic CMOS silicon sensors represent an important innovation for high-energy physics experiments due to their cheaper production and assembly cost compared to hybrid ones. Indeed, in hybrid devices, the electronics and the sensor are produced on different silicon substrates, which must be later connected using bonding techniques. However, as far as the time resolution is concerned, the most mature and high-performance technology today is represented by the Low Gain Avalanche Diode (LGAD), where a silicon sensor with an internal gain is connected to a custom electronics in a hybrid way.
The last ARCADIA submission exploited the integration of the LGAD concept in CMOS Monolithic Active Pixel Sensors (MAPS) to obtain the benefits provided by both technologies. The multiplication of the signals in MAPS has a major impact on the signal-to-noise ratio; hence, the power consumption of the in-pixel front-end can be lowered to achieve the same performances. In addition, this feature increases the attractiveness of these devices for space applications where low power absorption is desired. Nevertheless, the union of the two technologies still lies in its early stages, and vigorous R&D is necessary.
This presentation will focus on the last development concerning the passive and active structures with internal gain fabricated in a standard 110 nm CMOS technology within the ARCADIA project.
An overview of the first production with a simulated and measured gain around 3 will be provided. In laboratory measurements and test beam results will be presented. Special emphasis will be placed on the problems encountered during the characterization of the monolithic structures with integrated electronics. In addition, the results of the second production with increased gain will be presented.
Finally, the future perspectives and an insight into the ongoing R&D will be given.
