Speaker
Description
Future frontier accelerators envisage the use of silicon sensors in
environments with fluences exceeding $1\times10^{17}$ 1-MeV $n_{eq}/cm^2$. Presently available silicon sensors can operate efficiently up to fluences of the order of some $10^{16}$ 1-MeV $n_{eq}/cm^2$. Therefore, novel sensors and readout electronics must be devised.
Within this framework, state-of-the-art Technology CAD (TCAD) tools can be proficiently used to account for both bulk and surface radiation-induced damage effects in semiconductor sensors, fostering design optimization and enabling a predictive insight into the electrical behaviour of novel solid-state detectors. In particular, the balance between extending already developed and available models and methodologies or devising different approaches should be carefully considered.
In this contribution, the different available TCAD numerical models
addressing bulk and surface radiation damage effects will be illustrated. It will
also be shown how these models have been used for the optimization of
devices, particularly 3D sensors and Low Gain Avalanche Diodes. Moreover,
the applicability of these models needs to be extended to extreme fluence
scenarios, accounting for the modeling of acceptor and donor removals,
impact ionization, carriers’ mobility and lifetime, and traps dynamics.
