CMOS Monolithic Active Pixel Sensors: challenges and perspectives

by Walter Snoeys (CERN)

Friday 6 Dec 2024, 11:00 → 12:15 Europe/Zurich

40/S2-D01 - Salle Dirac (CERN)

CMOS cameras revolutionized the visible imaging world, and now move into other fields.  CMOS Monolithic Active Pixel Sensors (CMOS MAPS) have been successfully used in the STAR experiment and are now taking data in the 10 m2 Inner Tracker System (ITS2) of the ALICE experiment at CERN. CMOS MAPS in high energy physics (HEP) continue to be the object of intense research and development, for instance in EP R&D WP1.2 and DRDs, and for future ALICE and LHCb upgrades­, and detectors at FCC.  CMOS MAPS for HEP face very different requirements, but their development greatly benefits from the progress of CMOS imagers for visible light, the integration offered by stitching and wafer stacking, as well as trends in mainstream CMOS.

3D wafer stacking and stitching are now well established for CMOS sensors for visible light, and stacking is also now intensely pursued in mainstream CMOS. Advances in CMOS technology bring pixel pitches well below 10 micron for HEP within reach, significant radiation tolerance, increased resolution of our measurements and potential impact in other fields.  The development requires expertise in digital-on-top design and design verification to deal with the increasing circuit complexity, and expertise in devices and technology supported by TCAD and Monte Carlo simulations for sensor optimization. Design for yield, lower power densities reducing on-chip resistive drops, together with efficient volume test, assembly, and mounting, will be enablers for large area detectors and larger production volumes. This presentation will try to give an overview.  

Coffee will be served at 10:30.

Detector_Seminar_2024_WS.pdf

Recording

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