5th WG4 General Meeting

Monday 7 Oct 2024, 15:00 → 17:00 Europe/Zurich

Håkan Wennlöf (Deutsches Elektronen-Synchrotron (DE)), Marco Mandurrino (Universita e INFN Torino (IT))

Meeting Recording available here below:

GMT20241007-130345_Recording_1920x1080.mp4

The meeting opened at 15:00 and closed at 15:45.
The number of attendees peaked at 18.

Jürgen Burin gave a presentation about a very thorough literature review of TCAD parameters for 4H-SiC.
    Chapters on relative permittivity and impact ionisation models and parameters are available at https://jburin.web.cern.ch/
    More chapters will be added as they are finished. This is a very useful resource for future simulations.

    Questions:

• Michael Moll: have you also looked at non-local models for impact ionisation? JB: Have encountered some, but they are not available in TCAD tools.
• Jörn Schwandt: The impact ionisation also depends on the transport model used, and the size of the simulated device. For devices smaller than ~µm the models don't work so well anymore.
• Jörn: The purity of materials has also changed, so the mobility may have changed over the last 40 years. JB: The review shows that the models haven't changed much.
• Marco: Are there missing parameters, that are needed for simulations? JB: There are some missing data. It's an open question to identify where the shortcomings are.

The frequency of the meetings has been temporarily decreased, and will occur based on availability of speakers. Information about the next meeting will come from the conveners soon.

15:00 → 15:10 Introduction

Speakers: Håkan Wennlöf (Deutsches Elektronen-Synchrotron (DE)), Marco Mandurrino (Universita e INFN Torino (IT))

15:10 → 16:40 Updates on Simulations

15:10 CMOS simulation and connection between device-level and electronics simulations

monolithic sensor simulations - front-end electronics simulations - signal read-out and processing

15:25 Other detectors/technologies/activities

hybrid sensors (LGADs, 3D, strip detectors, …) - process simulation - particle-matter interaction - charge carrier transport

15:40 Newly measured semiconductor properties

non-silicon sensors simulation - gain layer/impact ionisation simulation

Speaker: Jürgen Burin (Austrian Academy of Sciences (AT))

Burin_4HSiC_review.pdf

15:55 Radiation damage: validation with measurements and development of high-fluence models

definition of benchmark models - high-fluence models - radiation environment simulations

16:10 Time dependent electric/weighting field

adaptive fields - signal formation in detectors with resistive electrodes - charge transport

16:25 Simulation tools development

integration of simulation tools - machine learning

16:40 → 17:00 Discussion and AoB

Speakers: Håkan Wennlöf (Deutsches Elektronen-Synchrotron (DE)), Marco Mandurrino (Universita e INFN Torino (IT))