Login

19th RD50 Workshop (CERN)

21–23 Nov 2011
CERN
Europe/Zurich timezone

Support

Contribution List

49 out of 49 displayed
Export to PDF
  1. 33. Welcome
    Gianluigi Casse (Liverpool University), Michael Moll (CERN)
    21/11/2011, 13:30
  2. 14. Effect of oxygen on annealing induced defects transformations in epitaxial silicon irradiated with high energy protons
    Pawel Kaminski (Institute of Electronic Materials Technology, Warsaw, Poland)
    21/11/2011, 13:40
    We show the results of both qualitative and quantitative analysis of defect levels in standard and oxygen-rich epitaxial silicon subjected to 24 GeV/c proton irradiation with a fluence of 1.7x10^16 cm-2 and annealing at temperatures of 20, 80, 160 and 240 oC. The radiation defect levels in the bandgap have been scanned by High-Resolution Photoinduced Transient Spectroscopy. In the standard...
    Go to contribution page
  3. 15. A comparative study of mixed irradiated sensors made of different silicon base material
    Robert Eber (KIT - Karlsruhe Institute of Technology (DE))
    21/11/2011, 14:00
    Mini strip sensors of n-in-p and p-in-n Float-zone and Magnetic Czochralski material have been irradiated to fluences ranging from 10^14neq/cm2 to 2*10^16neq/cm2 according to five different radii in the CMS tracker. An annealing study with signal and signal to noise ratio along with leakage current measurements has been performed with the ALiBaVa setup. The charge collection as function of...
    Go to contribution page
  4. 16. Depletion Voltage and Effective Doping Concentration of Float Zone and Magnetic Czochralski Silicon Diodes Irradiated by Protons to Conditions Relevant to the High Luminosity LHC
    Sally Seidel (University of New Mexico)
    21/11/2011, 14:20
    We describe our measurements of the depletion voltage and change in effective doping concentration obtained from capacitance measurements after irradiation and annealing of four types of silicon diodes: n- and p-type in both Float Zone (Fz) and Magnetic Czochralski (MCz) silicon. The samples were irradiated with 800 MeV protons to fluences reaching 1.1x10$^{15}$ n$_{eq}$/cm$^2$ and then...
    Go to contribution page
  5. 23. Nitrogen-doped silicon as a potentially radiation-hard material
    Pawel Kaminski (Institute of Electronic Materials Technology, Warsaw, Poland)
    21/11/2011, 14:40
    Defect engineering technology based on nitrogen doping is known to be capable of controlling both the voids and the oxygen precipitates in Czochralski silicon wafers and completely suppressing D and A defects produced by aggregates of vacancies and self-interstitials, respectively, in FZ single crystals. A review of defect reactions resulting from interactions of nitrogen atoms with intrinsic...
    Go to contribution page
  6. 29. The peculiarities of photoconductivity in the irradiated Si.
    Prof. Juozas Vaitkus (Vilnius University)
    21/11/2011, 15:30
    The irradiated Si pad structures were investigated. The details of conductivity and photoconductivity mechanisms are analyzed by investigation of free carrier concentration and mobility temperature dependence, and by thermally stimulated current using different excitation by light conditions. The effects of microinhomogeneities were observed by an existence of the persistent current and by the...
    Go to contribution page
  7. 27. Signals of heavily irradiated Si particle detectors
    Prof. Juozas Vaitkus (Vilnius University, Dept. Semiconductor Physics & Institute of Applied Research)
    21/11/2011, 15:50
    A role of moving carriers electric charge role was analyzed using the static and dynamic approches. The conditions, when the Ramo approximation is valid and invalid, are presented. The influence of generation current on the characteristics of heavily irradiated Si detector is demonstrated. It is shown the heavily irradiated diode behaves like a slow capacitor or un-stable resistor. It is...
    Go to contribution page
  8. 75. Discussion
    21/11/2011, 16:10
    Discussion
    Go to contribution page
  9. 3. Edge-TCT characterization of 24 Gev/c proton irradiated p-type silicon detectors
    Nicola Pacifico (CERN)
    22/11/2011, 09:00
    Oxygen-enriched silicon, both DO Float Zone and Magnetic Czochralski has proved to be more radiation tolerant than standard silicon in harsh radiation environments. We are going to summarize the results obtained with the Edge-TCT technique on field development with annealing in FZ and MCz n-on-p detectors from the 2010 Micron production batch. The studied structures were exposed to high...
    Go to contribution page
  10. 25. Extraction of physical quantities from edge-TCT measurements
    Irena Dolenc Kittelmann (CERN)
    22/11/2011, 09:20
    A method to extract trapping times from edge-TCT measurements is proposed. It is based on extraction of point charge drift velocity profile with corresponding electric field and determination of transfer function of the electronics used in edge-TCT measurements. The method is currently under the development however some preliminary results will be presented in this talk.
    Go to contribution page
  11. 7. Electric field and space charge in neutron irradiated n+p sensors
    Gregor Kramberger (Jozef Stefan Institute)
    22/11/2011, 09:40
    ATLAS-HPK n+-p miniature strips sensors were irradiated in steps with neutrons up to the cumulative fluence of 1e16. At each step Edge-TCT measurements were performed immediately after irradiation and also during accelerated beneficial annealing. The drift velocity profiles were used to model the space charge in the detectors.
    Go to contribution page
  12. 19. Effects of long-term annealing in p-type strip detectors irradiated with neutrons to 1x10e16 investigated by Edge-TCT
    Marko Milovanovic (Jozef Stefan Institute, Ljubljana)
    22/11/2011, 10:00
    Charge collection properties of a Hamamatsu n+-p micro-strip detector, irradiated to 1x10e16 1/cm2 with reactor neutrons, were measured using Edge-TCT. After several annealing steps, up to total time of 10240min. charge multiplication can be clearly seen for voltages even as low as a few hundred volts, as well as the influence of both short and long term annealing in high and low electric...
    Go to contribution page
  13. 10. A low cost scanning TCT
    Gregor Kramberger (Jozef Stefan Institute)
    22/11/2011, 10:50
    Abstract: A low cost scanning TCT which enables Edge-TCT has been built. All components except the moving stages and optics are custom made and in many ways surpass that of the commercial products. The choice of lasers vary from 670, 950 and 1060 with possibility of having programmable light patterns and pulses of large dynamic range.
    Go to contribution page
  14. 9. New research activity “Silicon detectors modeling in RD50”: goals, tasks and the first steps forward
    Dr Vladimir Eremin (Ioffe Physical-Technical institute of Russian Academy of Sciences)
    22/11/2011, 11:10
    The new RD50 project “Silicon detectors modeling” is motivated by the numerous results on the application of the original and professional software for simulations of irradiated silicon detectors characteristics and performance. The goal of the project is establishing the common physical understanding of the approaches for the modeling and the results, and performing the comparative studies of...
    Go to contribution page
  15. 0. Progress on the "Slim Edges" Project
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    22/11/2011, 11:30
    The UCSC-NRL "Slim Edges" Project made good progress. The laser scribing+cleaving was replaced by XeF2 etching+cleaving leading to a much improved i-V curve. The edge psssivation has also been finalized with Alumina for p-type sensors and Nitrogen PECVD for n-type. Charge collection will be discussed ina second talk
    Go to contribution page
  16. 5. Charge collection measurement on slim edge sensors with the ALiBaVa system.
    Riccardo Mori (University of Florence, INFN)
    22/11/2011, 11:50
    We report the charge collection measurement on p-on-n micro strip sensors with slim edges. The sensors were "GLAST" style sensors manufactured by HPK with 228 micron pitch. The edge was produced by PECVD deposition of Nitride and was 50 micron from the outer edge of the guard ring, about 200 micron from the active area. We find constant charge collection even in the last trip before...
    Go to contribution page
  17. 2. First results with non-irradiated and heavily irradiated microstrip trenched detectors.
    Dean Charles Forshaw (University of Liverpool-Unknown-Unknown)
    22/11/2011, 12:10
    One of the RD50 approved projects (Fabrication of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes) aims to enhance charge multiplication by “trenching” the strip. Here we present the first results before and after neutron irradiation.
    Go to contribution page
  18. 1. Update on charge collection annealing
    Gianluigi Casse (University of Liverpool (GB))
    22/11/2011, 12:30
    The annealing is now being accepted as a tool for improving the signal and reducing the negative effects of the reverse current (on noise and power dissipation). An update of the measurements of the charge collection as a function of the bias voltage and the current is here presented.
    Go to contribution page
  19. 4. Annealing of CCE in HPK strip detectors irradiated with pions and neutrons
    Igor Mandić (Jožef Stefan Institute)
    22/11/2011, 14:00
    In this presentation an update of CCE annealing studies with HPK strip detectors irradiated with PSI pions and reactor neutrons will be shown. Measurements of collected charge were made with SCT128A chip after several annealing steps at 60C.
    Go to contribution page
  20. 12. Performance and Aging of the Run-II CDF Silicon Detector
    Michelle Stancari (Fermilab)
    22/11/2011, 14:20
    The CDF Run-II silicon microstrip detector has witnessed 12 fb-1 of proton-antiproton collisions over the last 10 years. It has shown remarkable performance, with 90% of its channels functional, 80% error-free, and only one of its eight layers near the operational limits for full depletion. The measured bias currents, depletion voltage and ...
    Go to contribution page
  21. 13. Performance of Thin Irradiated SOI Detectors
    Philipp Weigell (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
    22/11/2011, 14:40
    Single chip pixel modules were built from an MPP-HLL production of 75µm thin sensors and ATLAS read-out chips exploiting the novel Solid Liquid Interdiffusion technology (SLID). We will present laboratory and testbeam measurements for these devices before and after irradiation with neutrons in Ljubljana and with protons in Karlsruhe. Additionally, first results from edgeTCT measurements...
    Go to contribution page
  22. 17. Charge collection in silicon strips sensors close to the accumulation layer
    Thomas Poehlsen (University of Hamburg)
    22/11/2011, 15:00
    The collection of charge carriers injected close to the Si Si02 interface of p on n silicon strip sensors was investigated using a red laser TCT setup. The sensors were investigated non-irradiated and after 1 MGy 12 keV photon irradiation. The relation between charge collection and accumulation layer was studied as well as the dependence on humidity and biasing history. A model of charge...
    Go to contribution page
  23. 18. Lorentz angle measurements on irradiated strip sensors
    Andreas Nuernberg (KIT - Karlsruhe Institute of Technology (DE))
    22/11/2011, 15:50
    Lorentz angle measurements on mixed-irradiated mini strip-sensors have been performed as part of the CMS HPK Campaign. Up to now, the study covers 320µm and 200µm thick n- and p-bulk floatzone sensors at a magnetic field of up to 8T at different temperatures and after two annealing steps. In addition to that, proton irradiated magnetic-czochralski and floatzone n-on-p sensors produced by...
    Go to contribution page
  24. 26. Measurements of highly irradiated ATLAS n+-in-n planar pixel sensors with unirradiated readout electronics
    Mr Andre Rummler (Technische Universitaet Dortmund (DE))
    22/11/2011, 16:10
    ATLAS plans two major upgrades of its pixel detector on the path to HLLHC: First, the insertion of a 4th pixel layer (Insertable B-Layer, IBL) is currently being prepared for 2013. This will enable the ATLAS tracker to cope with an increase of LHC's peak luminosity to about 3E34 cm^-2 s^-1 which requires a radiation hardness of the sensors of up to 5E15 n_eq cm^-2. Towards the end of this...
    Go to contribution page
  25. 28. Summary of measurements after first irradiation of HPK samples for CMS
    Joachim Erfle (Hamburg University (DE))
    22/11/2011, 16:30
    The aim of the CMS-HPK-campaign is to find a new sensor material for the HL-LHC Upgrade of the CMS-tracker. Different test structures and sensors were implemented on a variety of silicon materials by HPK, Japan. The first planned irradiation step (protons 3*10^14neq/cm2 and neutrons 4*10^14neq/cm2) was done and the results concerning dark current, effective doping concentration and CCE will be...
    Go to contribution page
  26. 32. Development of radiation-hard active sensors in 180 nm HV CMOS technology
    Daniel Muenstermann (CERN)
    22/11/2011, 16:50
    While CMOS processes are cost-efficient and commercially available, they have not yet been used to produce radiation-hard sensors. So-called HV CMOS processes combine a slightly higher resistivity p-type substrate with deep n-wells and allow the combination of a drift-based electron-collecting sensor with active cuircit components while keeping a fill factor of 100%. Achievable depletion...
    Go to contribution page
  27. 8. Edgeless detectors with CTS: the 1st year successful operation in TOTEM
    Dr Vladimir Eremin (Ioffe Physical-Technical Institute of Russian Academy of Sciences)
    22/11/2011, 17:10
    The approach for edgeless detectors with current terminating structure (CTS) has been developed in collaboration between PTI and TOTEM in 2006. The idea was proved in several successful beam tests and then realized in the design of edgeless detectors for the Roman Pots TOTEM stations. 400 detectors have been processed in the consortium “Silicon detector laboratory” in Russia. The first year...
    Go to contribution page
  28. 20. Annealing Studies with Irradiated p-Type Strip sensors
    Adrian Driewer (Albert-Ludwigs-Universitaet Freiburg (DE)), Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))
    22/11/2011, 17:30
    A number of miniature strip detectors were irradiated to HL-LHC fluences, and then subjected to annealing in different batches at different temperatures. Using a 90Sr beta-source and the ALIBAVA system, signal measurements where performed on these detectors for a number of bias voltages. The measurements were repeated with increasing annealing time in order to study the time evolution.
    Go to contribution page
  29. 74. Discussion
    Gregor Kramberger (Jozef Stefan Institute (SI))
    22/11/2011, 17:50
  30. 31. Characterization of CNM FE-I4 3D Double-Sided Sensors
    Mr Ali Harb (Institut de Fisica d'Altes Energies (IFAE), Barcelona)
    23/11/2011, 09:00
    The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance in the face of the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. To cope with the high data rate at a radius...
    Go to contribution page
  31. 30. Testbeam results of CNM 3D FE-I4 devices
    Shota Tsiskaridze (Universitat Autònoma de Barcelona (ES))
    23/11/2011, 09:20
    Data analysis results for CNM 3D FE-I4 devices from June and September IBL testbeams at CERN.
    Go to contribution page
  32. 24. Progress on the Low Resistance Strip Sensors Project
    Dr Miguel Ullan Comes (Universidad de Valencia (ES))
    23/11/2011, 09:40
    AC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous...
    Go to contribution page
  33. 11. Characterization of the new Stripixel detectors
    Ms Daniela Bassignana (IMB-CNM, CSIC)
    23/11/2011, 10:30
    The Centro Nacional de Microelectrónica (IMB-CNM-CSIC) of Barcelona in collaboration with the Brookhaven National Laboratory (BNL) of New York have developed a new design and technology for the novel prototypes generation of stripixel detectors, 2D position sensitive detectors manufactured using a true single-sided processing. The new device is a dual-column 3D detector in which the p+ and...
    Go to contribution page
  34. 77. Progress with 2D microstrip detectors with polysilicon electrodes
    Ivan Vila Alvarez (Universidad de Cantabria (ES))
    23/11/2011, 10:50
    to be completed
    Go to contribution page
  35. 6. First results from the online radiation dose monitoring system in ATLAS
    Igor Mandić (Jožef Stefan Institute)
    23/11/2011, 11:10
    Online radiation monitoring system measures ionizing dose in SiO2, fluences of 1-MeV(Si) equivalent neutrons and fluences of thermal neutrons at several locations in ATLAS detector. In this contribution measurements collected during two years of ATLAS data taking will be presented and compared to predictions from FLUKA simulation.
    Go to contribution page
  36. 78. Discussion
    23/11/2011, 11:30
  37. 80. Introduction
    Stephen Gibson (CERN)
    23/11/2011, 14:00
  38. 65. Measurements of rad damage at Tevatron
    Michelle Stancari (Fermi National Accelerator Laboratory)
    23/11/2011, 14:20
  39. 21. measurements of radiation damage in the CMS Pixel detector with the first few invers femptobarns
    Seth Zenz (Princeton University (US)), Tilman Rohe (Paul Scherrer Institut (CH))
    23/11/2011, 14:40
    Studies of radiation damage to the CMS Pixel Detector during LHC running are presented. Leakage current and depletion voltage are monitored with increasing fluence. Methods for addressing the challenges of these measurements in the context of ongoing detector operations are discussed. These include the derivation of depletion voltage from hit efficiencies, the measurement of silicon...
    Go to contribution page
  40. 22. Radiation Damage in the CMS Strips Tracker
    Christian Barth (KIT - Karlsruhe Institute of Technology (DE))
    23/11/2011, 15:00
    In this talk I give an overview of the radiation damage the strips tracker has suffered so far. These results are compared to the established model predictions. Finally an outlook is given for the future evolution of the detector properties within the next ten years.
    Go to contribution page
  41. 68. Measurement of rad damage in ATLAS pixels
    Markus Keil (Georg-August-Universitaet Goettingen (DE))
    23/11/2011, 15:20
  42. 69. Measurement of rad damage in ATLAS strips
    steve mcmahon
    23/11/2011, 15:40
  43. 70. Measurement of rad damage of LHCb silicon
    Dr Chris Parkes (Glasgow)
    23/11/2011, 16:30
  44. 72. Summary of RD50 results
    Gianluigi Casse (University of Liverpool (GB))
    23/11/2011, 17:00
  45. 81. Discussion
    Stephen Gibson (CERN)
    23/11/2011, 17:20
  46. 83. "Development of radiation-hard active sensors in 180 nm HV CMOS technology
    Dr Daniel Muenstermann (CERN)
  47. 71. Measurement of rad damage of Alice silicon
    Petra Riedler (CERN)
  48. 76. Results with a non-homogenously irradiated Medipix sensor
    to be completed
    Go to contribution page
  49. 73. Welcome
    Welcome
    Go to contribution page