Speaker
Prof.
Juozas Vaitkus
(Vilnius University, Dept. Semiconductor Physics & Institute of Applied Research)
Description
A role of moving carriers electric charge role was analyzed using the static and dynamic approches. The conditions, when the Ramo approximation is valid and invalid, are presented. The influence of generation current on the characteristics of heavily irradiated Si detector is demonstrated. It is shown the heavily irradiated diode behaves like a slow capacitor or un-stable resistor. It is proposed an increase of charge collection efficiency can be caused by the photo-electrical gain effect ir the static approach is valid, and the gain is dependent on the lifetime and the drift time ratio. The impact ionization avalanche caused gain is possible also within electrode edge region if a virtual photo-electrode is formed by high density of photo-generated excess carriers.
Author
Dr
Eugenijus Gaubas
(Vilnius University, Institute of Applied Research)
Co-authors
Prof.
Julijonas Kalade
(Vilnius University, Dept. Theroretical Physics)
Dr
Juozas Bucinskas
(Vilnius University, Dept. Theoretical Physics)
Prof.
Juozas Vaitkus
(Vilnius University, Dept. Semiconductor Physics & Institute of Applied Research)
Prof.
Viktor Shugurov
(Vilnius University, Dept. Theroetical Physics)
