Speaker
Thomas Poehlsen
(University of Hamburg)
Description
The collection of charge carriers injected close to the Si Si02 interface of p on n silicon strip sensors was investigated using a red laser TCT setup. The sensors were investigated non-irradiated and after 1 MGy 12 keV photon irradiation. The relation between charge collection and accumulation layer was studied as well as the dependence on humidity and biasing history. A model of charge collection and charge carrier losses at the interface was developed. Results will be presented and discussed.
Primary author
Thomas Poehlsen
(University of Hamburg)
Co-authors
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Jiaguo Zhang
(Institute of Experimental Physics, University of Hamburg)
Joern Schwandt
(Uni Hamburg)
Robert Klanner
(Hamburg University (DE))
