Speaker
Sally Seidel
(University of New Mexico)
Description
We describe our measurements of the depletion voltage and change in effective doping concentration obtained from capacitance measurements after irradiation and annealing of four types of silicon diodes: n- and p-type in both Float Zone (Fz) and Magnetic Czochralski (MCz) silicon. The samples were irradiated with 800 MeV protons to fluences reaching 1.1x10$^{15}$ n$_{eq}$/cm$^2$ and then annealed in several time steps at 60~$^\circ$C. The results were then fit using the Hamburg Model to extract annealing behavior constants.
