21–23 Nov 2011
CERN
Europe/Zurich timezone

Effects of long-term annealing in p-type strip detectors irradiated with neutrons to 1x10e16 investigated by Edge-TCT

22 Nov 2011, 10:00
20m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

Building 503-1-001
162
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Speaker

Marko Milovanovic (Jozef Stefan Institute, Ljubljana)

Description

Charge collection properties of a Hamamatsu n+-p micro-strip detector, irradiated to 1x10e16 1/cm2 with reactor neutrons, were measured using Edge-TCT. After several annealing steps, up to total time of 10240min. charge multiplication can be clearly seen for voltages even as low as a few hundred volts, as well as the influence of both short and long term annealing in high and low electric field detector region. The effect of charge multiplication also shows strong correlation with the increase of the leakage current.

Primary author

Marko Milovanovic (Jozef Stefan Institute, Ljubljana)

Co-authors

Gregor Kramberger (Jozef Stefan Institute (SI)) Igor Mandic (Jozef Stefan Institute (SI)) Marko Mikuz (Jozef Stefan Institute (SI)) Dr Marko Zavrtanik (Jozef Stefan Institute (SI)) Vladimir Cindro (Jozef Stefan Institute (SI))

Presentation materials