19th RD50 Workshop (CERN)

Session

Defect/Material characterisation

21 Nov 2011, 13:30

503/1-001 - Council Chamber (CERN)

Conveners

Defect/Material characterisation

• Mara Bruzzi (INFN and University of Florence)

33. Welcome

Gianluigi Casse (Liverpool University), Michael Moll (CERN)

21/11/2011, 13:30

14. Effect of oxygen on annealing induced defects transformations in epitaxial silicon irradiated with high energy protons

Pawel Kaminski (Institute of Electronic Materials Technology, Warsaw, Poland)

21/11/2011, 13:40

We show the results of both qualitative and quantitative analysis of defect levels in standard and oxygen-rich epitaxial silicon subjected to 24 GeV/c proton irradiation with a fluence of 1.7x10^16 cm-2 and annealing at temperatures of 20, 80, 160 and 240 oC. The radiation defect levels in the bandgap have been scanned by High-Resolution Photoinduced Transient Spectroscopy. In the standard...

15. A comparative study of mixed irradiated sensors made of different silicon base material

Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

21/11/2011, 14:00

Mini strip sensors of n-in-p and p-in-n Float-zone and Magnetic Czochralski material have been irradiated to fluences ranging from 10^14neq/cm2 to 2*10^16neq/cm2 according to five different radii in the CMS tracker. An annealing study with signal and signal to noise ratio along with leakage current measurements has been performed with the ALiBaVa setup. The charge collection as function of...

16. Depletion Voltage and Effective Doping Concentration of Float Zone and Magnetic Czochralski Silicon Diodes Irradiated by Protons to Conditions Relevant to the High Luminosity LHC

Sally Seidel (University of New Mexico)

21/11/2011, 14:20

We describe our measurements of the depletion voltage and change in effective doping concentration obtained from capacitance measurements after irradiation and annealing of four types of silicon diodes: n- and p-type in both Float Zone (Fz) and Magnetic Czochralski (MCz) silicon. The samples were irradiated with 800 MeV protons to fluences reaching 1.1x10$^{15}$ n$_{eq}$/cm$^2$ and then...

23. Nitrogen-doped silicon as a potentially radiation-hard material

Pawel Kaminski (Institute of Electronic Materials Technology, Warsaw, Poland)

21/11/2011, 14:40

Defect engineering technology based on nitrogen doping is known to be capable of controlling both the voids and the oxygen precipitates in Czochralski silicon wafers and completely suppressing D and A defects produced by aggregates of vacancies and self-interstitials, respectively, in FZ single crystals. A review of defect reactions resulting from interactions of nitrogen atoms with intrinsic...

29. The peculiarities of photoconductivity in the irradiated Si.

Prof. Juozas Vaitkus (Vilnius University)

21/11/2011, 15:30

The irradiated Si pad structures were investigated. The details of conductivity and photoconductivity mechanisms are analyzed by investigation of free carrier concentration and mobility temperature dependence, and by thermally stimulated current using different excitation by light conditions. The effects of microinhomogeneities were observed by an existence of the persistent current and by the...

27. Signals of heavily irradiated Si particle detectors

Prof. Juozas Vaitkus (Vilnius University, Dept. Semiconductor Physics & Institute of Applied Research)

21/11/2011, 15:50

A role of moving carriers electric charge role was analyzed using the static and dynamic approches. The conditions, when the Ramo approximation is valid and invalid, are presented. The influence of generation current on the characteristics of heavily irradiated Si detector is demonstrated. It is shown the heavily irradiated diode behaves like a slow capacitor or un-stable resistor. It is...

75. Discussion

21/11/2011, 16:10

Discussion