Conveners
Full detector systems
- Gregor Kramberger (Jozef Stefan Institute (SI))
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
22/11/2011, 11:30
The UCSC-NRL "Slim Edges" Project made good progress.
The laser scribing+cleaving was replaced by XeF2 etching+cleaving leading to a much improved i-V curve.
The edge psssivation has also been finalized with Alumina for p-type sensors and Nitrogen PECVD for n-type.
Charge collection will be discussed ina second talk
Riccardo Mori
(University of Florence, INFN)
22/11/2011, 11:50
We report the charge collection measurement on p-on-n micro strip
sensors with slim edges.
The sensors were "GLAST" style sensors manufactured by HPK with 228
micron pitch. The edge was produced by PECVD deposition of Nitride and was 50 micron from the outer edge of the guard ring, about 200 micron from the active area.
We find constant charge collection even in the last trip before...
Dean Charles Forshaw
(University of Liverpool-Unknown-Unknown)
22/11/2011, 12:10
One of the RD50 approved projects (Fabrication of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes) aims to enhance charge multiplication by “trenching” the strip. Here we present the first results before and after neutron irradiation.
Gianluigi Casse
(University of Liverpool (GB))
22/11/2011, 12:30
The annealing is now being accepted as a tool for improving the signal and reducing the negative effects of the reverse current (on noise and power dissipation). An update of the measurements of the charge collection as a function of the bias voltage and the current is here presented.
Igor Mandić
(Jožef Stefan Institute)
22/11/2011, 14:00
In this presentation an update of CCE annealing studies with HPK strip detectors irradiated with PSI pions and reactor neutrons will be shown. Measurements of collected charge were made with SCT128A chip after several annealing steps at 60C.
Michelle Stancari
(Fermilab)
22/11/2011, 14:20
The CDF Run-II silicon microstrip detector has witnessed 12 fb-1
of proton-antiproton collisions over the last 10 years.
It has shown remarkable performance, with 90% of its channels
functional, 80% error-free, and only one of its eight layers
near the operational limits for full depletion.
The measured bias currents, depletion voltage and
...
Philipp Weigell
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
22/11/2011, 14:40
Single chip pixel modules were built from an MPP-HLL production of
75µm thin sensors and ATLAS read-out chips exploiting the novel
Solid Liquid Interdiffusion technology (SLID). We will present
laboratory and testbeam measurements for these devices before and after
irradiation with neutrons in Ljubljana and with protons in Karlsruhe.
Additionally, first results from edgeTCT measurements...
Thomas Poehlsen
(University of Hamburg)
22/11/2011, 15:00
The collection of charge carriers injected close to the Si Si02 interface of p on n silicon strip sensors was investigated using a red laser TCT setup. The sensors were investigated non-irradiated and after 1 MGy 12 keV photon irradiation. The relation between charge collection and accumulation layer was studied as well as the dependence on humidity and biasing history. A model of charge...
Andreas Nuernberg
(KIT - Karlsruhe Institute of Technology (DE))
22/11/2011, 15:50
Lorentz angle measurements on mixed-irradiated mini strip-sensors have been performed as part of the CMS HPK Campaign. Up to now, the study covers 320µm and 200µm thick n- and p-bulk floatzone sensors at a magnetic field of up to 8T at different temperatures and after two annealing steps. In addition to that, proton irradiated magnetic-czochralski and floatzone n-on-p sensors produced by...
Mr
Andre Rummler
(Technische Universitaet Dortmund (DE))
22/11/2011, 16:10
ATLAS plans two major upgrades of its pixel detector on the path to HLLHC: First, the insertion of a 4th pixel layer (Insertable B-Layer, IBL) is currently being prepared for 2013. This will enable the ATLAS tracker to cope with an increase of LHC's peak luminosity to about 3E34 cm^-2 s^-1 which requires a radiation hardness of the sensors of up to 5E15 n_eq cm^-2. Towards the end of this...
Joachim Erfle
(Hamburg University (DE))
22/11/2011, 16:30
The aim of the CMS-HPK-campaign is to find a new sensor material for the HL-LHC Upgrade of the CMS-tracker. Different test structures and sensors were implemented on a variety of silicon materials by HPK, Japan. The first planned irradiation step (protons 3*10^14neq/cm2 and neutrons 4*10^14neq/cm2) was done and the results concerning dark current, effective doping concentration and CCE will be...
Daniel Muenstermann
(CERN)
22/11/2011, 16:50
While CMOS processes are cost-efficient and commercially available, they have not yet been used to produce radiation-hard sensors. So-called HV CMOS processes combine a slightly higher resistivity p-type substrate with deep n-wells and allow the combination of a drift-based electron-collecting sensor with active cuircit components while keeping a fill factor of 100%. Achievable depletion...
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences)
22/11/2011, 17:10
The approach for edgeless detectors with current terminating structure (CTS) has been developed in collaboration between PTI and TOTEM in 2006. The idea was proved in several successful beam tests and then realized in the design of edgeless detectors for the Roman Pots TOTEM stations. 400 detectors have been processed in the consortium “Silicon detector laboratory” in Russia. The first year...
Adrian Driewer
(Albert-Ludwigs-Universitaet Freiburg (DE)),
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
22/11/2011, 17:30
A number of miniature strip detectors were irradiated to HL-LHC fluences, and then subjected to annealing in different batches at different temperatures. Using a 90Sr beta-source and the ALIBAVA system, signal measurements where performed on these detectors for a number of bias voltages. The measurements were repeated with increasing annealing time in order to study the time evolution.
