Speaker
Description
At present, extreme ultraviolet (EUV) lithography with a wavelength of 13.5 nm represents the most advanced technology for mass-producing cutting-edge semiconductor chips. According to the Rayleigh criterion, next-generation beyond extreme ultraviolet (BEUV) lithography, which employs a light source with a wavelength of approximately 6.x nm, is expected to further enhance resolution, thereby enabling the fabrication of chips with even smaller feature sizes. In our research, we propose a regenerative amplifier free-electron laser BEUV source with harmonic lasing, driven by a superconducting energy-recovery linac (ERL). This approach significantly reduces the required electron energy and facility size relative to other accelerator-based proposals, thereby offering new possibilities for constructing high-power BEUV sources with low-energy ERLs.
