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    XV International Symposium on "Radiation from Relativistic Electrons in Periodic Structures "RREPS-25"

    15–19 Sept 2025
    Asia/Shanghai timezone

    Contacs

    Session

    Channeling and Crystal-assisted Processes

    18 Sept 2025, 10:30

    Conveners

    Channeling and Crystal-assisted Processes: Channeling and Crystal-assisted Processes

    • Werner Lauth (University Mainz)

    Presentation materials

    There are no materials yet.

    1. 231. Coherent combining of phase-locked high power microwave radiations
      Jinchuan JU (national university of defense technology)
      18/09/2025, 10:30
      Laser-driven particle accelerators and radiation sources
      Invited

      Relativistic klystron amplifier is a promising device to lock and steer the phases of high power microwave radiations, by which coherent combining of multiple radiations can be achieved to enhance the total equivalent radiation power. We report the investigations on coherent combining of phase-steerable high power microwaves (HPMs) generated by X-band relativistic triaxial klystron amplifiers...

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    2. 232. Periodically Boron-doped diamond to achieve a crystal undulator
      Dr Thu Nhi Tran Caliste (European Synchrotron Radiation Facility)
      18/09/2025, 10:55
      Channeling and crystal-assisted processes
      Oral

      Undulators are the insertion devices mostly used to produce X-ray beams in modern synchrotron radiation facilities. It was pointed out [1] that by using the channeling process of ultra-relativistic electrons within the planes of periodically doped single crystals (Si-Ge, Boron doped diamond) it could be possible to achieve a compact crystal undulator in the MeV range and beyond. Indeed a...

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    3. 275. Electrons vs positrons in bent silicon crystals: deflection dynamics and coherent radiation at Sub-GeV energies
      Riccardo Negrello (Universita e INFN, Ferrara (IT))
      18/09/2025, 11:10
      Channeling and crystal-assisted processes
      Oral

      We present a comprehensive experimental and simulation study of beam steering and radiation emission by sub-GeV electrons and positrons traversing bent silicon crystals, performed at the Mainz Microtron (MAMI). Using electron beams at 855, 600, and 300 MeV and a 15 μm-thick silicon crystal bent along the (111) planes, we investigated both angular deflection profiles and gamma-ray emission. Our...

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    4. 267. Germanium crystal undulator realization through pulsed laser melting technique
      Davide Valzani (INFN - Laboratori Nazionali di Legnaro, Università degli Studi di Padova)
      18/09/2025, 11:25
      Channeling and crystal-assisted processes
      Oral

      Germanium crystal undulator realization through pulsed laser melting technique

      D. Valzani¹², F. Sgarbossa¹², G. Maggioni¹², C. Carraro¹², F. Nicolasi¹², A. Sytov³, L. Bandiera³, D. De Salvador¹²

      ¹ Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova, Italy
      ² *National Institute for Nuclear Physics INFN, Laboratori Nazionali di Legnaro,...

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