Speaker
Description
This contribution presents new insights into the elusive "X-defect", observed in Thermally Stimulated Current (TSC) measurements as a low-temperature shoulder to the BiOi defect in irradiated silicon diodes. Despite repeated observations, this defect has so far eluded assignment to a specific chemical structure.
A low-resistivity (10$\,\Omega$cm) p-type epitaxial silicon diode, irradiated with 5.5$\,$MeV electrons, was investigated. Simulations were employed to reproduce TSC spectra using defect parameters obtained from Deep-Level Transient Spectroscopy (DLTS), allowing comparison and validation across both methods.
Double-DLTS measurements revealed that the underlying field-enhanced emission mechanism of the X-defect is a phonon-assisted tunneling process. This identification supports the assignment of the X-defect to the di-vacancy in the donor charge state $\text{V}_2(0/+)$, providing a strong candidate for its chemical structure.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
