Speaker
Description
In future nuclear fusion reactors, monitoring escaping suprathermal ions, such as the 3.5 MeV alpha particles produced in D-T reactions, is crucial for optimizing plasma performance and maintaining reactor integrity. Silicon carbide (SiC) emerges as a promising candidate for fast ion detection due to its wide bandgap, high radiation tolerance, and thermal stability.
This study focuses on a 4H-SiC p-n junction detector developed by the Institute of Microelectronics of Barcelona (IMB-CNM). The detector has a ring collector electrode instead of a metalized surface, making it suitable not only for charged particle detection but also as a potential diagnostic tool for X-ray detection in fusion environments.
The detector was irradiated with 3.5 MeV alpha particles at fluences ranging from 10^11 to 10^13 ions/cm^2 under three different temperature conditions: room temperature (RT), 200°C, and 400°C. The irradiation process was monitored in real time using Proton-Induced X-ray Emission (PIXE) to ensure accurate fluence control. The spectroscopic response was evaluated through Charge Collection Efficiency (CCE) measurements using Ion Beam Induced Charge (IBIC).
These results provide valuable insight into the suitability of SiC-based detectors for use in extreme environments, such as nuclear fusion reactors, where high temperatures and radiation levels challenge conventional diagnostic systems.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
