3rd DRD3 week on Solid State Detectors R&D

Session

WG6/WP3 - Non-silicon-based detectors

5 Jun 2025, 13:50

Nikhef, Amsterdam

42. Sapphire detector characterization with α-source and e-beam

Dr Pietro Grutta (University of Padua, INFN)

05/06/2025, 13:50

WG6 - Wide bandgap materials

Artificial sapphire has gained interest as a wide bandgap ($9.9\;{\rm eV}$) material for radiation hard detectors. Optical-grade single crystal sapphire is industrially grown in a variety of sizes with low cost. The low signal yield ($22\;\text{eh}\,{\rm μm}^{-1}{\rm MIP}^{-1}$) makes it suitable for applications where the collected charge is well above the readout noise. Also, it exhibits...

70. Gallium Nitride Schottky Devices for Sensing Applications

Christoph Thomas Klein (Carleton University (CA))

05/06/2025, 14:10

WG6 - Wide bandgap materials

Gallium nitride (GaN) is a desirable material for charged particle spectroscopy in high temperature, high radiation environments. We report on results obtained from GaN vertical Schottky devices fabricated on 8 µm thick non-intentionally doped GaN epitaxial layers grown on native GaN substrates where the thick epi-layer is intended for ionizing radiation detection. Bulk dark current densities...

20. Radiation effects in 4H-SiC PN diodes, LGAD sensors, and MOSFET transistors

Jiri Kroll (Czech Academy of Sciences (CZ)), Radek Novotny (Czech Technical University in Prague (CZ))

05/06/2025, 14:30

WG6 - Wide bandgap materials

The wide bandgap 4H-SiC semiconductor material exhibits several intrinsic properties - namely, excellent radiation hardness, thermal stability, and high breakdown voltage - that make it a promising candidate for deployment in high-radiation environments. Recent advances in its industrial-scale production have further enhanced its attractiveness for high-energy physics applications.

This...

15. Silicon Carbide Source Characterisation Setup and Results at CERN

Roman Mueller (CERN)

05/06/2025, 14:50

WG6 - Wide bandgap materials

Silicon carbide (SiC) is a promising material for particle detection and beam diagnostics due to its wide bandgap. At CERN, we established an experimental setup with radioactive sources to evaluate the performance of SiC sensors. This effort involved integrating SiC PAD sensors from 2nd to 4th CNM wafers being tested into a small, shielded tabletop setup, enabling precise measurement of pulse...

8. Characterization of 4H-SiC p-n Junction Detectors for Alpha Particle Detection in Plasma Diagnostics

Carmen Torres Munoz (Universidad de Sevilla (ES))

05/06/2025, 15:10

WG6 - Wide bandgap materials

In future nuclear fusion reactors, monitoring escaping suprathermal ions, such as the 3.5 MeV alpha particles produced in D-T reactions, is crucial for optimizing plasma performance and maintaining reactor integrity. Silicon carbide (SiC) emerges as a promising candidate for fast ion detection due to its wide bandgap, high radiation tolerance, and thermal stability.
This study focuses on a...

17. Fabrication Progress and Performance Characterization of SiC detectors

Xiyuan Zhang (Chinese Academy of Sciences (CN))

05/06/2025, 15:30

WG6 - Wide bandgap materials

Wide bandgap (WBG) semiconductors are increasingly strengthening their dominance in the power device market, with significant improvements in crystal growth and device processing technologies. As the core material for high-voltage power devices, silicon carbide (SiC) has emerged as a highly competitive candidate for particle detectors, owing to its outstanding radiation hardness (maintaining...

9. Development of innovative SiC detectors for harsh environments

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

05/06/2025, 16:10

WG6 - Wide bandgap materials

This talk will review the development of innovative radiation detectors that can be robustly operated in harsh environments. It requires the use of advanced microelectronic technology together with nanotechnology, and therefore, outcomes include the definition of completely new processing sequences. This new approach considers exploring novel uses and functionalities of 2D materials, such as...

39. In-situ Radiation Damage Study of Silicon Carbide Detectors subjected to Clinical Proton Beams

Daniel Radmanovac (Austrian Academy of Sciences (AT))

05/06/2025, 16:30

WG6 - Wide bandgap materials

4H-silicon carbide (4H-SiC) is an emerging wide bandgap detector material in high-energy physics due to its superior temperature stability and low dark current compared to silicon detectors. Critical to the performance of SiC detectors and electronics is their response to radiation damage induced defects. There exists a significant amount of literature showing the compensation of lightly doped...

32. Mechanisms of proton irradiation-induced defects on the electrical performance of 4H-SiC PIN detectors

Zaiyi Li (Chinese Academy of Sciences (CN))

05/06/2025, 16:50

WG6 - Wide bandgap materials

Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, high thermal conductivity, and fast response. 4H-SiC PINs fabricated by Nanjing University were irradiated by 80-MeV protons to investigate the irradiation effects. The irradiated PINs showed a decrease in leakage current and...

5. Rising Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector

Congcong Wang (Chinese Academy of Sciences (CN))

05/06/2025, 17:10

WG6 - Wide bandgap materials

Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors and photodetectors. A graphene-optimized 4H-SiC detector has been fabricated to expand the application of SiC detectors. Its electrical properties and the charge...

35. Study of 4H-SiC LGADs for 4D-Tracking Application

Tao Yang

05/06/2025, 17:30

WG6 - Wide bandgap materials

This report presents the latest progress in the development of 4H-SiC LGADs by LBNL, NCSU, and BNL. Building on the successful fabrication of 4H-SiC LGADs with etched termination and field plate, we have developed 4H-SiC AC-LGADs with 4D-tracking capabilities. Preliminary evaluations of their timing and spatial resolution have been conducted using UV-TCT, β sources, and electron beams,...

48. 2.5 GeV Proton Irradiated 4H-SiC LGADs

Yashas Satapathy

05/06/2025, 17:50

WG6 - Wide bandgap materials

In contrast to silicon, 4H-SiC offers the potential to exhibit superior radiation hardness and significantly lower leakage current making it a compelling candidate for LGAD technology in extreme environments. This reduced leakage current can eliminate the need for active cooling, offering important operational and engineering advantages in space- and power-constrained detector systems. A joint...

80. Project Proposal disussion and approval

Alexander Oh (The University of Manchester (GB)), Dr Tao Yang (Lawrence Berkeley National Laboratory), Xin Shi (Chinese Academy of Sciences (CN))

05/06/2025, 18:10