Speaker
Description
Artificial sapphire has gained interest as a wide bandgap ($9.9\;{\rm eV}$) material for radiation hard detectors. Optical-grade single crystal sapphire is industrially grown in a variety of sizes with low cost. The low signal yield ($22\;\text{eh}\,{\rm μm}^{-1}{\rm MIP}^{-1}$) makes it suitable for applications where the collected charge is well above the readout noise. Also, it exhibits very low leakage current at room temperature ($\sim \rm pA$), which remains nearly unchanged even after exposure to high doses, keeping shot noise levels minimal.
A R&D campaign aimed at developing a microstrip sapphire detector was carried out within the scientific context of LUXE at DESY. Sapphire pad and strip detectors ($110\;{\rm μm}$ and $150\;{\rm μm}$ thick) were manufactured and characterized with x-ray, electron beam and alpha source – the last both at room and cryogenic temperature. Various electrode compositions were fabricated and investigated.
The study presents experimental results on charge collection efficiency as a function of bias voltage, as well as measurements of ionization yield and radiation tolerance.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |