2–6 Jun 2025
Nikhef, Amsterdam
Europe/Amsterdam timezone

Silicon Carbide Source Characterisation Setup and Results at CERN

5 Jun 2025, 14:50
20m
Nikhef, Amsterdam

Nikhef, Amsterdam

WG6 - Wide bandgap materials WG6/WP3 - Non-silicon-based detectors

Speaker

Roman Mueller (CERN)

Description

Silicon carbide (SiC) is a promising material for particle detection and beam diagnostics due to its wide bandgap. At CERN, we established an experimental setup with radioactive sources to evaluate the performance of SiC sensors. This effort involved integrating SiC PAD sensors from 2nd to 4th CNM wafers being tested into a small, shielded tabletop setup, enabling precise measurement of pulse characteristics such as timing resolution and charge estimation. The initial results underscore significant advancements in the overall measurement setup, including enhanced signal stability and improved shielding. We will show the outcomes of the calibration procedures and the initial data acquisition runs performed using the UCSC board with several sensors. These measurements provide a first validation of the system’s capability to resolve fast signals and support further development of SiC-based detector technologies.

Type of presentation (in-person/online) in-person presentation
Type of presentation (I. scientific results or II. project proposal) I. Presentation on scientific results

Authors

Presentation materials