Speaker
Description
Wide bandgap (WBG) semiconductors are increasingly strengthening their dominance in the power device market, with significant improvements in crystal growth and device processing technologies. As the core material for high-voltage power devices, silicon carbide (SiC) has emerged as a highly competitive candidate for particle detectors, owing to its outstanding radiation hardness (maintaining ultra-low leakage current post-irradiation) and wide temperature-range operation capability (from room temperature to elevated temperatures). We have fabricated first-generation 4H-SiC PIN and low-gain avalanche detector (LGAD) devices, and conducted characterization of their performance under 80 MeV proton irradiation (2×1011~1×10¹⁴ nₑq/cm²) and high-temperature operation (90°C). Based on these results, we have developed optimized second-generation devices, with PIN detectors currently in the fabrication process. For AC-LGAD pixel devices, we have established a preliminary TCAD simulation framework to guide optimization of critical process parameters, demonstrating viable approaches for radiation-resistant SiC detector development.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |