Speakers
Description
The wide bandgap 4H-SiC semiconductor material exhibits several intrinsic properties - namely, excellent radiation hardness, thermal stability, and high breakdown voltage - that make it a promising candidate for deployment in high-radiation environments. Recent advances in its industrial-scale production have further enhanced its attractiveness for high-energy physics applications.
This contribution presents an overview of the development and characterization of 4H-SiC-based sensors produced by the onsemi company based in the Czech Republic. The study includes the evaluation of 4H-SiC PN diodes and Low Gain Avalanche Detectors (LGADs) featuring an internal charge multiplication layer. Electrical characterization covers the dependence of reverse leakage current and bulk capacitance on the applied depletion voltage, internal gain measurements using UV light sources, and the first Transient Current Technique (TCT) studies employing UV lasers.
Radiation tolerance was assessed through irradiation of both PN and LGAD samples with 24 GeV protons at the CERN IRRAD facility, reaching fluences up to $1 .0\times10^{16} \mathrm{p/cm^{2}}$. Additional insight into radiation-induced effects was gained by subjecting the biased 4H-SiC MOSFET transistors to gamma irradiation using a $^{60}$Co source at UJP Praha a.s. and to 24 GeV proton irradiation at CERN IRRAD. The obtained results provide new perspectives on the radiation hardness of 4H-SiC devices and underscore their potential for future use in demanding environments typical for next-generation high-energy physics experiments.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |