Speaker
Description
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, high thermal conductivity, and fast response. 4H-SiC PINs fabricated by Nanjing University were irradiated by 80-MeV protons to investigate the irradiation effects. The irradiated PINs showed a decrease in leakage current and lost typical capacitance-voltage characteristics. The deep levels and minority carrier lifetime were measured by DLTS and TRPL. A Deep-Level Compensation Model (DLCM) was established using open source software RASER to simulate I-V and C-V characteristics under proton irradiation up to $7.8\times10^{14} n_{eq}/cm^2$. Simulation result shows the electric field changed due to compensation effect after irradiation, and caused the decrease of leakage current.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |