2–6 Jun 2025
Nikhef, Amsterdam
Europe/Amsterdam timezone

2.5 GeV Proton Irradiated 4H-SiC LGADs

5 Jun 2025, 17:50
20m
Nikhef, Amsterdam

Nikhef, Amsterdam

WG6 - Wide bandgap materials WG6/WP3 - Non-silicon-based detectors

Speaker

Yashas Satapathy

Description

In contrast to silicon, 4H-SiC offers the potential to exhibit superior radiation hardness and significantly lower leakage current making it a compelling candidate for LGAD technology in extreme environments. This reduced leakage current can eliminate the need for active cooling, offering important operational and engineering advantages in space- and power-constrained detector systems. A joint collaboration between NCSU, LBNL, and BNL has previously demonstrated functional 4H-SiC LGADs and evaluated their timing performance. This study represents ongoing progress from the collaboration, presenting an initial investigation of 4H-SiC LGAD performance following irradiation with 2.5 GeV protons at various fluences. Preliminary electrical characterization results are discussed, along with the next steps toward the realization of a radiation-hard LGAD platform based on 4H-SiC.

Type of presentation (in-person/online) online presentation (zoom)
Type of presentation (I. scientific results or II. project proposal) I. Presentation on scientific results

Author

Co-authors

Abraham Tishelman-Charny (Brookhaven National Laboratory (US)) Ben Sekely (North Carolina State University) Dr Carl Haber (Lawrence Berkeley National Laboratory) Gil Atar Mr Greg Allion (North Carolina State University Nanofabrication Facility) John Muth (North Carolina State University) Phil Barletta Spyridon Pavlidis (North Carolina State University) Stefania Stucci (Brookhaven National Laboratory) Stephen Holland Tao Yang

Presentation materials