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13th WG4 General Meeting
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Europe/Zurich
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The meeting opened at 15:00 and closed at 15:45.
The number of attendees was stable at 17.
General news:
- The next DRD3 week takes place in Amsterdam, 2nd to 6th of June. Abstract submission closes at noon on May 23rd. Please submit abstracts!
- The WG4 session block is scheduled on the Thursday morning (5th of June)
Evridiki Chatzianagnostou presented work on TCAD simulations of 3D silicon sensors
- Studying 3D silicon sensors, investigating the possibility of internal charge multiplication
- Investigating different geometries; fully penetrating or partially penetrating electrodes
- Looking at breakdown behaviour
- Different geometries
- Different p-mechanism geometries
- Investigating modifications of the end of the pillar, adding a "head" which seems to improve gain capabilities
Questions and Answers:
- Gregor K: Similar studies were shown in a previous meeting. How would one go about makoing this round tip? How can it be etched? EC: FBK din't immediately object to the idea, it seems possible. It's done using deep reactive ion etching. Martin v.B: Have discussed with Maurizio. Bosch process, isotropic. Colum with a ball on the end.
- Gregor K: How are the doping profiles made? EC: Generic TCAD profiles, using an error function with 1.5 µm for diffusion.
- Marco B: For the simulations using the heavy ion model deposition: how many different locations within a cell are tested? EC: Normally we look in the optimal position, between pillars. It is the best case scenario. Will later go to Allpix Squared to scan over the full pixel cell. Gregor K: It matters a llot where the deposition occurs; the gain is not the same across the cell. This was also seen in our work (see presentation at previous meeting).
The conveners will announce the time for the next meeting via email.
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