Speaker
Description
The MALTA family of Depleted Monolithic Active Pixel Sensors, fabricated in a modified 180 nm CMOS imaging process, is being developed to meet the stringent requirements of next-generation collider experiments. These sensors are designed to provide high spatial resolution, fast timing, and excellent radiation tolerance. The MALTA2 prototype employs small collection electrodes and optimized front-end electronics, achieving low capacitance, low noise, and efficient charge collection even after substantial irradiation. Sensors have been irradiated up to 5×$10^{15}$ 1 MeV $n_{eq}$/$cm^{2}$ and characterized in laboratory setups, SPS CERN test beams, and using grazing angle techniques. Measurements demonstrate hit efficiencies above 95% up to 3×$10^{15}$ $n_{eq}$/$cm^{2}$ with stable tracking performance under high fluences. Current development focuses on a process modification incorporating ultra-high n-layer doping to further enhance radiation tolerance. This contribution will summarize recent measurement results and highlight ongoing efforts toward the development of future MALTA prototypes.
| Position | PhD student |
|---|---|
| Affiliation | Indian Institute of Technology Madras |
| Country | India |