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TPA-TCT meeting --- Ion implantation
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Europe/Zurich
TPA-TCT meeting
27/05/2025
Samples: Seven (good, measured by Marie) thick (300 µm) p-in-n diodes, each 1.3 × 1.3 mm², capacitance below 1pF. Can we also include SiC diodes?
PCB Design: We need to define the PCB type and request the GDS files for the metal layers from CNM.
Need to measure the beam spot diameter, the micro beam head slit is almost close and there is uncertainty about the actual spot size
for measuring it, a copper grid (20um hole, 5 um diameters of the wire)in front of a hole in the sensor carrier PCB is needed.
Fiducial Mark: Defined using the corners of the backside metallization opening.
Proposal to define FM by highly irradiating around the centre of the diode, area scale around 100um.
Ion Implantation: Single- and few-ion implantation studies; ion counting will rely on transient event detection
Irradiation Parameters: CNA will propose the ion species (protons, He, C, Si), energies, and fluences for discussion. Typical conditions: 1000 ions/sec with microsecond pulse durations.
SRIM Simulations: Results indicate that heavy ions generate vacancy densities several orders of magnitude higher than protons. What is the expected radial distribution of these defects?
Objective: Can we experimentally resolve a head–tail asymmetry in the defect density profile?
TPA-TCT Setup: Double-side illumination will be used to probe the spatial distribution of defects.
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