Speaker
Description
We report the first results from our study on the non-irradiated novel silicon 3D-trench pixel detector based on 8-inch CMOS process (IME) originated from the first batch production. A novel 3D-Trench pixel sensor with an enclosed deep trench surrounding the central columnar cathode, has stronger isolation with neighbouring pixels and sharper electric field around the cathode. The first batch of 3D-Trench pixel sensors are being fabricated at the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). To reduce the dead area in the 3D sensor, the Bosch Deep Reactive Ion Etching (DRIE) technology is being developed to achieve an aspect ratio of more than 100:1. The second batch is being designed, expected to be fabricated in 2026.
Bias scan and device depth scan (exploiting several 2PA depths (0, 7, 15, 20 and 30 um) with both 2PA and 3PA are performed by utilizing the laser beam at the ELI ERIC, ELI Beamlines Facility. The gain at around 50 V bias is clearly demonstrated. The following parameters: Rising Time (RT), Time of Arrival (ToA) and Charge (Q), spatially resolved were studied. This way the spatial response of each point in the sensor volumeter is carefully examined. Results will be compared also to those obtained on 3D CNM Double Side Double Column devices with almost 9 times larger active depth and accordingly, 10x larger diameter.
In future we plan to extend study on other multicell structures (with different number of cells), exploring different cell dimension and including the irradiated samples as well.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |