Speaker
Description
Small pixel 3D sensors were produced by IME-CAS on 8 inch p type wafers of 700 Ωcm. The 30 μm thick silicon detectors have trench walls (ohmic p+) and very narrow n-column columns with diameter of only 0.5 $\mu$m. A 5 × 5 matrix of 35 × 35μm2 was measured with Two Photon Absorption Transient Current Technique. At higher voltages the devices show stable operation with high gain originating from impact ionization close to the n+ junction column in a similar way in gas proportional chambers without any specially dedicated gain layer doping. The devices were fully
characterized in terms of charge collection uniformity and time resolution performance across the cell at different bias voltages. The measured performance was also simulated with good agreement between both.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
