Speaker
Description
This study investigates the inter-pixel distance (IPD) of 250 µm-thick
Trench-isolated Low Gain Avalanche Detectors (Ti-LGADs) fabricated by
Micron Semiconductor Ltd. Single Photon Absorption (SPA) and Two Photon
Absorption (TPA) Transient Current Technique (TCT) scans were performed
at the Extreme Light Infrastructure (ELI ERIC) to study the dependence
of the effective IPD on interaction depth. The results show that the
apparent IPD increases when the interaction occurs near the detector
backside and decreases when close to the front-side gain layer. The best IPD measured was around 6 microns. A larger
backside IPD corresponds to a lower fill factor, which could limit
performance for low-penetrating particles. Ti-LGADs are being
investigated as potential imaging sensors coupled to the Timepix3/4
family of ASICs for low-penetrating radiation detection, such as soft
X-rays, where small pixel sizes are essential.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
