Speaker
Description
The Analog Pixel Test Structures (APTS) are a family of sensor prototypes produced in the TPSCo CMOS 65 nm ISC technology. They contain 4x4 pixels of varying pitches between 10 and 25 μm, implement different diode designs, namely standard, n-blanket and n-gap, to tailor charge collection, and further design variations to optimize the sensor layout in the given process. The structures have been designed and submitted in the scope of CERN EP R&D and the ALICE ITS3 upgrade, and a subset of them has been investigated at DESY in the scope of the TANGERINE project.
The analog readout scheme of the APTS allows measuring the collected charge with a high resolution, while future sensors will most likely provide much coarser charge measurements or even no charge information at all. Test-beam data, acquired on APTS at the DESY II test-beam facility, is used to study how the granularity of the charge measurement will affect the spatial resolution of these future sensors. To achieve this, the digitization will be emulated offline, scanning different numbers of bins, bin widths, and thresholds. The results will be interpreted in the context of the OCTOPUS project.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
