Speaker
Description
Kevin Lauer,$^{1,2}$ Bernd Hähnlein,$^{1}$ Mario Bähr,$^{1}$ Kai Kühnlenz,$^{1}$ Phillipp Kellner,$^{1}$ Dirk Schulze,$^{2}$ Stefan Krischok,$^{2}$ Alexander Rolapp,$^{3}$ Christian Möller$^{1}$ and Thomas Ortlepp$^{1}$
$^{1}$ CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
$^{2}$ Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany
$^{3}$ IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gGmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
Defects from the A$_{Si}$-Si$_{i}$-defect category [1] were proposed to be responsible for the acceptor removal phenomenon (ARP) in low gain avalanche detectors (LGAD).[2] On the way to physically understand the A$_{Si}$-Si$_{i}$-defect category low temperature photoluminescence measurements are performed on quenched indium doped silicon samples. Additionally, the samples are irradiated by microwaves. By sweeping the microwaves over a frequency range optically detected magnetic resonance (ODMR) signals are found. Some ODMR correlate with resonances in the sample temperature, which are called temperature detected magnetic resonances (TDMR). ODMR and TDMR signals are shown and discussed within the A$_{Si}$-Si$_{i}$-defect model with indium as acceptor species.
[1] K. Lauer, K. Peh, D. Schulze, T. Ortlepp, E. Runge, and S. Krischok, ‘The A$_{Si}$-Si$_{i}$ Defect Model of Light-Induced Degradation (LID) in Silicon: A Discussion and Review’, Phys. Status Solidi A, vol. 219, no. 19, p. 2200099, 2022, doi: 10.1002/pssa.202200099.
[2] K. Lauer, K. Peh, S. Krischok, S. Reiß, E. Hiller, and T. Ortlepp, ‘Development of Low-Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon’, Phys. Status Solidi A, vol. 219, no. 17, p. 2200177, Jun. 2022, doi: 10.1002/pssa.202200177.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
