Speaker
Description
Study of Si detectors for radiation tolerance at extreme fluences up to 1e18 neq/cm2 has been suffering with numerous challenges. Defects created in the crystal lattice, compensate the doping by trapping the free charge carriers, causing the depletion region to collapse. Resultantly, the electrical defect characterization tools become ineffective. This moves our attention towards the optical characterization tools such as FTIR spectroscopy. Incoming light undergoes resonance with different vibrational modes of the bonds present in the crystal structure; hence we get characteristic peaks belonging to a particular set of defects. In the present study FTIR spectrum of Si pieces irradiated to extreme neutron fluences at room and low temperatures is presented. Results from newly acquired FTIR spectrometer at CERN are also displayed and concentration of defects is calculated.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
