Speaker
Andra-Georgia Boni
(National Institute of Materials Physics – Romania)
Description
We present the results of DLTS investigation of as-grown and radiation-induced defects in n-type 4H-SiC Schottky diodes irradiated with different fluences of 6 MeV electrons. The only variable between the samples has been the irradiation fluence, varying from unirradiated state up to fluences as high as 6E14 e/cm2. The DLTS spectra were analyzed and simulated to extract the defect parameters. The study also examined the annealing behavior of defects up to 750 K (~477°C).
The results are correlated with current literature and discussed in terms of defect evolution, thermal stability and possible chemical identification.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
Authors
Andra-Georgia Boni
(National Institute of Materials Physics – Romania)
Andrei Nitescu
(National Institute of Material Physics -NIMP)
Cristina Besleaga Stan
(National Institute of Materials Physics, Romania)
Dragos Geambasu
(NIMP)
Ioana Pintilie
(National Inst. of Materials Physics (RO))
Roxana-Elena Patru
(National Institute for Materials Physics, Bucharest)
