Speaker
Description
The DRD 7.6b activity focuses on establishing a coordinated and sustainable strategy for shared access to advanced 2.5D and 3D integration technologies within the DRD7 framework. This initiative aims to enable detector R&D groups to exploit key enabling technologies, such as Through-Silicon Vias (TSVs), Redistribution Layers (RDLs), silicon interposers, and wafer-to-wafer (W2W) bonding, for next-generation readout and sensing systems.
This progress report presents the overall strategy, technological milestones, and implementation roadmap of DRD 7.6b. It summarizes recent advances in TSV and RDL process integration, including the design and realization of a full silicon-based interposer wafer developed and fabricated entirely with in-house technologies, and the associated packaging approaches that support dense and heterogeneous detector assemblies. A brief overview of the status at the main European facilities engaged in these activities is also provided, highlighting process capabilities, access mechanisms, and collaborative developments.
Building on the establishment of interposer-based integration, the next step will focus on wafer-to-wafer (W2W) bonding technologies, which represent a key enabler for fully vertical 3D integration and high-throughput heterogeneous stacking. This evolution will strengthen the shared infrastructure and promote a common design and process ecosystem for future detector innovations.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | III. other (please specify in comment field) |
