Speaker
Description
Wide band-gap (WBG) semiconductors such as SiC and GaN are increasingly driving advances in high-efficiency, high-power electronics. With improved substrate growth and reduced defect densities, these materials have also emerged as promising candidates for radiation detection. However, further characterization and optimisation is required before they can replace silicon for some applications.
GaN’s wide band gap (3.4 eV) and strong Ga–N bond suggest excellent thermal and radiation resilience. While several studies have demonstrated GaN-based radiation detector, these typically use GaN epitaxial layers grown on Si, SiC, or sapphire. The performance of true GaN-on-GaN devices under harsh environments remains insufficiently understood. For broader adoption in high-radiation settings it will require further development and characterisation1, 2.
In this work, Schottky diodes of varying geometries were fabricated on an n-type GaN bulk wafer with an n⁻ epilayer. Following metal rapid thermal annealing, the devices were characterized via current–voltage (I–V) and capacitance–voltage (C–V) measurements, exhibiting typical Schottky behaviour with design-dependent variations. However, they have displayed high leakage current, which is detrimental to their application as radiation detectors. To gain deeper insight into the underlying physical mechanisms driving the observed trends, temperature-dependent I-V and C-V measurements were carried out and the results are systematically analysed in the present contribution.
1. Capan I. Wide-Bandgap Semiconductors for Radiation Detection: A Review. Materials. 17 (5). 2024.
2. Vaitkus J, et al. Semi-insulating GaN and its evaluation for α particle detection. Nucl. Instrum. Methods Phys. Res. Section A. 509 (1-3). 2003.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
