-
11/11/2025, 14:00
-
Iskra Velkovska (Jozef Stefan Institute (SI))11/11/2025, 14:32WG2 - Hybrid silicon sensors
Trench-isolated LGADs (TI-LGADs), developed at FBK, are devices in which pixelated LGAD pads are separated by physical trenches etched into the silicon substrate and filled with a dielectric material. Designed as an alternative to implant-based inter-pad isolation techniques (such as JTEs), this technology offers a significant reduction in dead regions, thereby mitigating fill-factor...
Go to contribution page -
Han Li (University of Science and Technology of China (CN))11/11/2025, 14:50WG2 - Hybrid silicon sensors
The development of next-generation particle detectors capable of precise 4D tracking is crucial for future high-energy physics experiments. AC-LGAD have emerged as a leading technology to achieve excellent spatial and temporal resolution simultaneously. This report details the development and characterization of a new batch of AC-LGAD detectors fabricated by the University of Science and...
Go to contribution page -
Gaetano Barone (Brown University), Xiaohe Shen (Brown University (US))11/11/2025, 15:08WG2 - Hybrid silicon sensors
Devices with internal gain, such as Low Gain Avalanche Diodes (LGADs), demonstrate O(30) ps timing resolution, and they play a crucial role in High Energy Physics (HEP) experiments, among other applications. Similarly, resistive silicon devices, such as AC-coupled Low Gain Avalanche Diodes (AC-LGADs) sensors, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution....
Go to contribution page -
Don Ching-Long Wong, Gaetano Barone (Brown University), Jessica Tang (Brown University (US))11/11/2025, 15:26WG2 - Hybrid silicon sensors
Resistive Silicon Devices (RSDs), particularly AC-coupled Low Gain Avalanche Diodes (AC-LGADs), open the path of pico-second level space and time (4D) tracking in high-energy physics (HEP) experiments such as those at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and future (lepton) colliders facilities. These sensors combine the fine spatial resolution of segmented detectors...
Go to contribution page -
Pablo Fernandez-Martinez (IMB-CNM, CSIC)11/11/2025, 15:44
-
Gabriele Giacomini (Brookhaven National Laboratory (US))11/11/2025, 15:54
-
Dr Simone Michele Mazza (University of California,Santa Cruz (US))11/11/2025, 16:34WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are characterized by a fast rise time (~500ps) and extremely good time resolution (down to 17ps), and potential for a very high repetition rate with ~1 ns full charge collection. For the application of this technology to near future experiments such as e+e- Higgs factories (FCC-ee), the ePIC detector at the Electron-Ion Collider, or smaller experiments...
Go to contribution page -
Nicolo Cartiglia (INFN Torino (IT))11/11/2025, 16:52WG2 - Hybrid silicon sensors
In this contribution, I will present new studies on the properties of DC-RSD. These sensors, manufactured at FBK, have been tested at 2 test beams at the DESY beam line. The performance of prototypes with different surface resistivities and pixel sizes will be presented. This study also focuses on the determination of the relationship between surface resistivity and pixel size, identifying a...
Go to contribution page -
Francesca Carnesecchi (INFN e Laboratori Nazionali di Frascati (IT))11/11/2025, 17:10WG2 - Hybrid silicon sensors
The proposed ALICE 3 experiment requires outstanding Particle Identification (PID) based on Time-of-Flight (TOF), setting a highly ambitious timing resolution target of 20 ps. Achieving this goal necessitates intensive Research and Development (R&D) into next-generation silicon sensor technology for large-area systems.
Low-Gain Avalanche Diodes (LGADs) are primary candidates due to their...
Go to contribution page -
Andrew Donald Gentry (University of New Mexico (US))11/11/2025, 17:28WG2 - Hybrid silicon sensors
Silicon detectors typically require a large inactive region surrounding the sensitive region, to accommodate guard rings, which help maintain the electric field uniformity around peripheral pixels, and isolate high current generation due to defects at the physical edges of the detectors. Sensors with reduced inactive regions around their periphery are desirable for applications in high-energy...
Go to contribution page -
Marco Ferrero (Universita e INFN Torino (IT))11/11/2025, 17:46WG2 - Hybrid silicon sensors
The preliminary characterisation of thin LGAD sensors on n-type substrate will be presented. Electrical performances from I-V and C-V measurements on the wafer will be shown, along with the gain behaviour using red and blue LEDs.
Go to contribution page -
Maurizio Boscardin (Fondazione Bruno Kessler (IT)), Maurizio Boscardin (FBK Trento)11/11/2025, 18:02
Choose timezone
Your profile timezone: