This talk outlines the fabrication progress of the second-generation 4H-SiC Low-Gain Avalanche Diode (SICAR2), designed for a nominal gain of 10–15. Fabricated using 350nm stepper lithography and substrate thinning for improved timing resolution, the 2mm × 2mm die includes devices with 1.4mm and 0.55mm active areas, along with AC-pixelated (2×2) and AC-strip (4-strip) test structures. All...
We investigate a novel approach for edge termination in SiC Low-Gain Avalanche Diodes
(LGADs), based on controlled ion-implantation-induced damage in mesa-etched structures.
TCAD simulations and preliminary experimental results indicate that this method provides
efficient high-voltage termination through helium implantation performed near the mesa edge,
without consequent thermal...
The second production of planar 4H-SiC device wafers (CNM 17560) from the RD50 SiC LGAD common project was completed in summer 2025 at CNM Barcelona, consisting of two wafers — one with a 50µm and one with a 100µm epitaxial layer. The high yield of PAD diodes from this production now enables statistically robust, cross-institutional studies of radiation damage effects in 4H-SiC. In addition,...
3D diamond detectors feature conductive column arrays fabricated within Chemical Vapour Deposition (CVD) diamond using femtosecond-laser graphitization. In this work, several 3D geometries are simulated, with electric fields simulated in Sentaurus TCAD and signal responses studied via Monte Carlo simulations using Garfield++. Then a Neural Network (NN)–based algorithm is developed to analyse...
The development of future high-energy colliders, such as the Future Circular Collider (FCC), requires detectors, particularly tracking systems, capable of operating in extremely high radiation environments. To meet this challenge, new radiation-tolerant materials are crucial. Owning to its wide band gap (5.47 eV) and considerable displacement energy (42 eV/atom), diamond is a promising...
Due to their inherent properties, Chemical Vapor Deposition (CVD) diamond detectors are often highly appealing solutions in the field of nuclear technology, in applications where radiation sensors are expected to provide reliable response in harsh conditions and under high fluences in mixed radiation environments. Moreover, today’s technological challenges require the development of particle...
Wide band-gap (WBG) semiconductors such as SiC and GaN are increasingly driving advances in high-efficiency, high-power electronics. With improved substrate growth and reduced defect densities, these materials have also emerged as promising candidates for radiation detection. However, further characterization and optimisation is required before they can replace silicon for some...
Gallium nitride (GaN) is a key semiconductor material for optoelectronic and high-power applications such as light-emitting diodes (LEDs), laser diodes, and high electron mobility transistors (HEMTs). Owing to its wide bandgap (3.4 eV), high thermal stability, and large displacement energy, GaN is also a promising candidate for ionizing radiation detection under extreme conditions. For such...
