The DRD 7.6b activity focuses on establishing a coordinated and sustainable strategy for shared access to advanced 2.5D and 3D integration technologies within the DRD7 framework. This initiative aims to enable detector R&D groups to exploit key enabling technologies, such as Through-Silicon Vias (TSVs), Redistribution Layers (RDLs), silicon interposers, and wafer-to-wafer (W2W) bonding, for...
As part of the CERN EP R&D programme and the DRD3 collaboration, innovative and scalable concepts for hybridisation and module integration are being developed for pixel detector applications in future colliders. Most interconnect processes require specific surface properties and topologies of the bonding pads. An in-house Electroless Nickel Gold (ENIG) plating process is therefore under...
The development of hybrid pixel detectors requires reliable, flexible and cost-effective interconnect technologies that are suitable for single-die processing in R&D projects and for low-volume productions.
This presentation reports on the current status and recent progress of in-house hybridization techniques developed within the CERN EP R&D programme and the DRD3 collaboration. These...
Increasing power density in modern detector front-end electronics and readout ASICs require advanced thermal management techniques that can handle heat dissipation more effectively. This challenge is particularly critical in high-energy physics experiments where spatial constraints and reliability requirements demand efficient thermal interfaces. This study presents a comprehensive comparative...
