Speaker
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Kevin Lauer,1 Thomas Klein,1 Stephanie Reiss,1 Christian Möller,1 Thomas Ortlepp,1 Stefan Meyer2 and Wolfgang Berger2
1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
2Carl Zeiss Microscopy GmbH, Carl-Zeiss-Straße 22, 73446 Oberkochen, Germany
Low gain avalanche detectors (LGAD) are used to detect photons and particles with a medium internal gain of around 10. [1] In this contribution we report on the optimization of LGADs produced at CiS [2] for sensing particles with low penetration depth in silicon like low energy electrons. Such detectors could be used e.g. in SEMs for higher contrast images. The optimization strategy was to reduce the entrance window thickness and to develop a shallow gain layer region. As a result of the LGAD optimization work quantum efficiencies for electrons with an energy of 1keV of up to 450% could be realized.
[1] G. Paternoster et al., ‘Developments and first measurements of Ultra-Fast Silicon Detectors produced at FBK’, J. Instrum., vol. 12, no. 02, pp. C02077–C02077, Feb. 2017, doi: 10.1088/1748-0221/12/02/C02077.
[2] K. Lauer, K. Peh, S. Krischok, S. Reiß, E. Hiller, and T. Ortlepp, ‘Development of Low-Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon’, Phys. Status Solidi A, vol. 219, no. 17, p. 2200177, June 2022, doi: 10.1002/pssa.202200177.