Speaker
Description
This talk reviews the development of 4H-SiC Low Gain Avalanche Detectors as a next step in wide bandgap sensor technology. It will outline the material advantages of 4H-SiC including radiation hardness, thermal stability, and high breakdown strength, and then focus on the ongoing LGAD program led by the Czech collaboration with onsemi together with partners within DRD3 WG6.
A central part of the contribution is the development and evaluation of the first segmented LGAD structures produced in 4H-SiC. The presentation will highlight progress on segmentation design, charge-sharing behaviour, and early timing studies, supported by initial TCT and testbeam campaigns. In parallel, the stability and uniformity of the implanted gain layer are being investigated across wafers and compared with TCAD predictions to understand the achievable control of internal multiplication in SiC. These results frame the current status of SiC LGAD development and define the next steps toward robust, radiation-tolerant timing detectors for future high energy physics applications.